| 住所 | 〒161-0034 東京都新宿区上落合1-30-14 大関ビル2F |
|---|---|
| TEL | 03-5937-5273 |
| FAX | 03-5937-5274 |
| URL | http://www.glory-g.co.jp |
| info@glory-g.co.jp | |
| 設立年 | 2010年 |
| 資本金 | 3,000,000円 |
| 従業員数 | 4名 |
| 取締役 | 金 一瑞 |
| 最終更新日：2024年03月28日 |
2インチから６インチのGaAs基板、2インチから4インチのInP基板にカスタム構造の MOCVDエピタキシャル成長を提供しています。
GaAs Epi, InP Epi 専門メーカー
The 850 nm vertical-cavity surface-emitting laser (VCSEL) epi-wafer, designed especially for the telecommunication/gesture recognition/3D imaging applications, is grown by metal-organic chemical vapor
deposition (MOCVD) by Huaxing OPTO, with GaAs/AlGaAs multiple quantum wells(MQWs) as the active layer.
The 980 nm Fabry-Perot (FP) laser diode(LD) epi-wafer, designed especially for the high-power characteristics, is grown by metal-organic chemical vapor deposition(MOCVD) by Huaxing OPTO, with strained InGaAs quantum well as the active layer.
The 1310 nm Fabry-Perot (FP) laser diode(LD) epi-wafer, designed especially for thehigh-speed fiber-optic communications, is grown by metal-organic chemical vapor deposition (MOCVD) by Huaxing OPTO,with strained InAlGaAs or InGaAsP multiple quantum wells (MQWs) as the active layer.
The 1310 nm 10G Fabry-Perot (FP) laser diode (LD) epi-wafer, designed especially forthe high-speed fiber-optic communications,
is grown by metal-organic chemical vapor deposition (MOCVD) by Huaxing OPTO,with strained InAlGaAs or InGaAsP multiple
quantum wells (MQWs) as the active layer.
The 1550 nm Fabry-Perot (FP) laser diode(LD) epi-wafer, designed especially for thehigh-speed fiber-optic communications, is grown by metal-organic chemical vapor deposition (MOCVD) by Huaxing OPTO,
with strained InAlGaAs or InGaAsP multiple quantum wells (MQWs) as the active layer.
