光製品ナビ：オプトロニクス社 - 企業情報

BATOP GmbH

OPIE '26

住所	〒- Germany
TEL	004936416340090
FAX
URL	http://www.batop.de
E-mail	info@batop.de
設立年	2003年
資本金	4,400,000円
従業員数	19名
Director	Andreas Richter
	最終更新日：2026年03月12日

OPIE '26 出展の見どころ

Optimized mode locked laser components and modules for the development of frequency combs.

企業PR

BATOP is a leading manufacturer of ultrafast semiconductor optoelectronics devices with a wide expertise and experience in thin film technology based on molecular beam epitaxy and sputter coating. Our product portfolio includes non-linear optical components such as saturable absorbers, photoconductive antennas for terahertz generation and detection as well as picosecond microchip lasers and components for ultrafast fiber lasers. In addition, we are also offering complete THz spectrometers with a wide range of accessories. Furthermore, we are growing wafers according to your specifications based on III-V semiconductors.

BATOP GmbH 取り扱い製品

SAM™ - Saturable Absorber Mirror 700nm - 3000nm

Saturable absorber mirrors are Bragg-mirrors with AlAs/GaAs quarter-wave stacks, grown on GaAs wafers with one or more low temperature GaAs (LT-GaAs) or LT-InGaAs films as saturable absorbers.

Our saturable absorber mirrors with carrier relaxation times in the picosecond range can be used for passive mode-locking and Q-switching of diode-pumped lasers. The design of the thin film stack can be adjusted to meet the requirements of different passively mode-locked lasers in the picosecond and femtosecond region.

RSAM™ - Resonant Saturable Absorber Mirror

The resonant saturable absorber mirror (RSAM) is designated to reshape an optical signal. An optical signal which propagates in optical fibers, communication nodes and other optical devices is subject to optical losses and is modified. After every amplification stage, which uses the stimulated optical emission process, the signal to noise ratio decreases as a result of the inevitable spontaneous emission.

The RSAM, included after an optical amplifier, decreases the noise floor and allows to pass the optical pulses unaffected due to the nonlinear-optical behavior.

SOC - Saturable Output Coupler

Using a saturable output coupler (SOC), a self-starting, passively mode-locked or Q-switched diode-pumped solid-state or fiber laser with a very simple layout can be arranged. The SOC is a combination of a saturable absorber mirror (SAM) with an output coupler.

SANOS™ - Saturable Noise Suppressor

SA - Saturable Absorber in transmission

The saturable absorber without a Bragg-mirror can be used for self-starting, passively mode-locking of a laser in a similar way as a SAM, but it is working in transmission mode. It can be inserted for instance into a fiber ring laser.
The saturatioon fluence of a SA is substantial higher then that of a SAM.

RSA - Resonant Saturable Absorber in transmission

The resonant saturable absorber can be used for passively mode-locking of a ring laser in a similar way as a SA. But it is a resonant device with the following special characteristics:
- Zero reflectance at the resonance wavelength for low intensity.
- Zero transmittance for all wavelengths outside the resonance.
- At the resonance wavelength increasing transmittance with increasing pulse fluence.
- The saturation fluence is substantial lower then that of a SA.
The above mentioned characteristics allow the construction of a passively mode locked fiber ring laser with a laser wavelength fixed at the resonance wavelength of the RSA.

MCL-1064: Microchip laser 1064 nm

The microchip laser module delivers short single mode pulses on demand at a wavelength of 1064 nm. The pulse repetition rate is software controlled and can be set between single shot and 500 kHz. The nominal pulse duration is 150 ps. The MCL-1064-150 contains a microchip with pump diode and a software controlled electronic module. The microchip is based on a Nd:YVO4 laser crystal with a semiconductor saturable output coupler. A fiber coupled version of the microchip laser MCL-1064-150-f is also available. For the fiber coupled microchip laser the output is realized by a FC/APC terminated PM single mode fiber.

Fiber Laser Oscillator Core Module

Fiber Laser Oscillator Core Module for 1560nm with SAM, polarizer and WDM for 1480nm pumping, polarisation maintaining (PM) fiber.

Fiber Bragg mirror

Polarisation maintaining (PM) single mode patchcord for 1550nm with Bragg-mirror for 1560nm. It can be combined with our product line of Fiber Laser Oscillator Core Modules to build mode locked lasers.

PCA - Photoconductive Antenna for Terahertz waves

Our photoconductive antennas can be used for emission and detection of THz pulses using pulsed lasers with wavelength of 800 nm, 1060 nm or 1550 nm. They can be fiber coupled and equipped with different types of silicon substrate lenses leading to a divergent, collimated or focused THz beam. For efficient THz power generation we offer our patented large area interdigital antenna arrays.

Terahertz time-domain spectrometer

We offer a compact table-top terahertz time-domain spectrometer TDS10XX with our spectrometer software T3DS for the frequency range 0.05 - 4 THz. The spectrometer allows transmission and reflection measurements in a nitrogen purged sample compartment. An additional imaging scan unit with fiber coupled antennas can be used for reflection or transmission measurements on large objects. As we seek interested buyers for THz spectrometers, we will continue to fully support the needs of our existing customers.

Fiber Module Liner Laser Cavity (FMLLC)

- Micro-Optic package containing the core components for a mode-locked laser:
- Saturable absorber mirror with polarizer, WDM and performance optimizing optics
- Compact design (50 x 13 x 8 mm)
- Options
► Adjustable saturable absorber mirror (z-axis)
► Active fiber on common port
- Custom configurations on request

Custom Devices

• Growth of III-V semiconductor thin film stacks according to customer design
• Applications: linear / non-linear devices with fast time response, e.g., optical detectors, saturable absorbers or photoconductive antennas
• Substrate material: GaAs wafer with size 2" (50.8 mm) or 4" (100 mm) diameter
• Available materials: AlAs, GaAs, InAs, AlGaAs, AlInAs, InGaAs and AlInGaAs
• Low temperature epitaxial growth for short response time down to ~ 0.5 ps
• Optional: customized metal structures

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